AT28BV256-20TU

ATMEL  AT28BV256-20TU  EEPROM, 256 Kbit, 32K x 8位, 5 MHz, 并行, TSOP, 28 引脚

The is a high-performance Electrically Erasable and Programmable Read-Only Memory EEPROM organized as 32768 words by 8-bit. Manufactured with Atmels advanced nonvolatile CMOS technology, the device offers access times to 200ns with power dissipation of just 54mW. When the device is deselected, the CMOS standby current is less than 200µA. The AT28BV256 is accessed like a static RAM for the read or write cycle without the need for external components. The device contains a 64-byte page register to allow writing of up to 64-byte simultaneously. During a write cycle, the addresses and 1 to 64-byte of data are internally latched, freeing the address and data bus for other operations. Following the initiation of a write cycle, the device will automatically write the latched data using an internal control timer. The end of a write cycle can be detected by data polling of I/O7. Once the end of a write cycle has been detected a new access for a read or write can begin.

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Automatic page write operation

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Internal control timer

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Fast write cycle times

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Page write cycle time - 10ms maximum

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Low power dissipation

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Hardware and software data protection

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Data polling for end of write detection

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High reliability CMOS technology

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Endurance - 10000 cycles

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Data retention - 10 years

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JEDEC Approved byte-wide pinout

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Industrial temperature ranges

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Green product and no Sb/Br