APT15GT60BRDQ1G概述
功率半导体功率模块 Power Semiconductors Power Modules
Use the IGBT transistor from as an electronic switch. Its maximum power dissipation is 184000 mW. It has a maximum collector emitter voltage of 600 V. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 150 °C.
APT15GT60BRDQ1G中文资料参数规格
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替代型号APT15GT60BRDQ1G
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
APT15GT60BRDQ1G Microsemi 美高森美 | 当前型号 | 当前型号 |
STGW19NC60HD 意法半导体 | 功能相似 | APT15GT60BRDQ1G和STGW19NC60HD的区别 |