APT7M120B概述
N沟道MOSFET N-Channel MOSFET
In addition to amplifying electronic signals, you"ll be able to switch between various lines with the power MOSFET, developed by . Its maximum power dissipation is 335000 mW. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.
APT7M120B中文资料参数规格
技术参数
额定电压DC 1.20 kV
额定电流 7.10 A
极性 N-CH
耗散功率 335 W
输入电容 2.57 nF
栅电荷 80.0 nC
漏源极电压Vds 1200 V
连续漏极电流Ids 7.00 A
上升时间 8 ns
输入电容Ciss 2565pF @25VVds
额定功率Max 335 W
下降时间 13 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 335W Tc
封装参数
安装方式 Through Hole
引脚数 3
封装 TO-247-3
外形尺寸
封装 TO-247-3
物理参数
材质 Silicon
工作温度 -55℃ ~ 150℃ TJ
其他
产品生命周期 Active
包装方式 Tube
符合标准
RoHS标准 RoHS Compliant
含铅标准 Lead Free
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