Trans IGBT Chip N-CH 600V 56A 250000mW 3Pin3+Tab TO-247
Don"t be afraid to step up the amps in your device when using this IGBT transistor from . It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 250000 mW. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a single configuration.