功率半导体功率模块 Power Semiconductors Power Modules
The IGBT transistor from is the best electronic switch for fast switching. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 500000 mW. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
APT60GT60BRG Microsemi 美高森美 | 当前型号 | 当前型号 |
APT50GF120B2RG 美高森美 | 类似代替 | APT60GT60BRG和APT50GF120B2RG的区别 |
HGT1N30N60A4D 飞兆/仙童 | 功能相似 | APT60GT60BRG和HGT1N30N60A4D的区别 |
IXGX120N60B IXYS Semiconductor | 功能相似 | APT60GT60BRG和IXGX120N60B的区别 |