APT25GN120BG

利用最新的场站和沟槽栅技术 Utilizing the latest Field Stop and Trench Gate technologies

Use the IGBT transistor from as an electronic switch. Its maximum power dissipation is 272000 mW. It has a maximum collector emitter voltage of 1200 V. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 150 °C.