APT75GN60BG

功率半导体功率模块 Power Semiconductors Power Modules

This IGBT transistor from is an electronic switch that can handle large currents with very little gate current drive. Its maximum power dissipation is 536000 mW. It has a maximum collector emitter voltage of 600 V. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. It is made in a single configuration.