APT35GN120 系列 1200 V 94 A 379 W 220 nC NPT 场截止 IGBT - TO-247-3
This IGBT transistor from is an electronic switch that can handle large currents with very little gate current drive. Its maximum power dissipation is 379000 mW. It has a maximum collector emitter voltage of 1200 V. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 150 °C.