APT25GN120SG

利用最新的场站和沟槽栅技术 Utilizing the latest Field Stop and Trench Gate technologies

The IGBT transistor from is the best electronic switch for fast switching. Its maximum power dissipation is 272000 mW. It has a maximum collector emitter voltage of 1200 V. This IGBT transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single configuration.