APT35GN120L2DQ2G

功率半导体功率模块 Power Semiconductors Power Modules

You can use this IGBT transistor from as an electronic switch. It has a maximum collector emitter voltage of 1200 V. Its maximum power dissipation is 379000 mW. This IGBT transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single configuration.