Trans IGBT Chip N-CH 600V 100A 463000mW 3Pin3+Tab TO-247
The IGBT transistor from will work effectively even with higher currents. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 463000 mW. This IGBT transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single configuration.
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
APT30GP60BG Microsemi 美高森美 | 当前型号 | 当前型号 |
HGTG20N60A4D 安森美 | 功能相似 | APT30GP60BG和HGTG20N60A4D的区别 |
HGTG20N60B3D 安森美 | 功能相似 | APT30GP60BG和HGTG20N60B3D的区别 |
HGTG30N60A4 安森美 | 功能相似 | APT30GP60BG和HGTG30N60A4的区别 |