APT25GR120SD15

功率半导体功率模块 Power Semiconductors Power Modules

This IGBT transistor from will work perfectly in your circuit. Its maximum power dissipation is 521000 mW. It has a maximum collector emitter voltage of 1200 V. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.