APT25GP90BDQ1G

Trans IGBT Chip N-CH 900V 72A 417000mW 3Pin3+Tab TO-247

The IGBT transistor from is perfect to use as an electronic switch eliminating the current at the gate. It has a maximum collector emitter voltage of 900 V. Its maximum power dissipation is 417000 mW. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.