APT30GP60BDQ1G概述
Trans IGBT Chip N-CH 600V 100A 463000mW 3Pin3+Tab TO-247
Minimize the current at your gate with the IGBT transistor from . Its maximum power dissipation is 463000 mW. It has a maximum collector emitter voltage of 600 V. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 150 °C.
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替代型号APT30GP60BDQ1G
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
APT30GP60BDQ1G Microsemi 美高森美 | 当前型号 | 当前型号 |
APT30GP60BDQ1 美高森美 | 功能相似 | APT30GP60BDQ1G和APT30GP60BDQ1的区别 |