APT25GN120B2DQ2G

功率半导体功率模块 Power Semiconductors Power Modules

This fast-switching IGBT transistor from will be perfect in your circuit. Its maximum power dissipation is 272000 mW. It has a maximum collector emitter voltage of 1200 V. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.