功率MOS V® POWER MOS V®
POWER MOS V®
POWER MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increase packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.
FEATURES
• Faster switching
• Lower Leakage
• 100% Avalanche tested
• Popular TO-247 Package
• RoHS compliant
贸泽:
MOSFET Power MOSFET - MOS5
艾睿:
Amplify electronic signals and switch between them with the help of Microsemi&s;s APT20M45BVRG power MOSFET. Its maximum power dissipation is 300000 mW. This device utilizes power mos v technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
Verical:
Trans MOSFET N-CH 200V 56A 3-Pin3+Tab TO-247 Tube
Win Source:
MOSFET N-CH 200V 56A TO-247
额定电压DC 200 V
额定电流 56.0 A
漏源极电阻 45 mΩ
极性 N-CH
耗散功率 300 W
阈值电压 4 V
输入电容 4.86 nF
栅电荷 195 nC
漏源极电压Vds 200 V
漏源击穿电压 200 V
连续漏极电流Ids 56.0 A
上升时间 14 ns
输入电容Ciss 4860pF @25VVds
额定功率Max 300 W
下降时间 7 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 300W Tc
安装方式 Through Hole
引脚数 3
封装 TO-247-3
长度 16.26 mm
宽度 5.31 mm
高度 21.46 mm
封装 TO-247-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
APT20M45BVRG Microsemi 美高森美 | 当前型号 | 当前型号 |
APT20M45BVR 美高森美 | 功能相似 | APT20M45BVRG和APT20M45BVR的区别 |
SML20B56 Semelab | 功能相似 | APT20M45BVRG和SML20B56的区别 |