功率半导体功率模块 Power Semiconductors Power Modules
In addition to amplifying electronic signals, you"ll be able to switch between various lines with the power MOSFET, developed by . Its maximum power dissipation is 300000 mW. This device is made with power mos v technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
额定电压DC 300 V
额定电流 40.0 A
漏源极电阻 85 mΩ
耗散功率 300 W
阈值电压 4 V
输入电容 4.95 nF
栅电荷 195 nC
漏源极电压Vds 300 V
漏源击穿电压 300 V
连续漏极电流Ids 40.0 A
上升时间 10 ns
输入电容Ciss 4950pF @25VVds
下降时间 7 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 300W Tc
安装方式 Through Hole
引脚数 3
封装 TO-247-3
长度 21.46 mm
宽度 16.26 mm
高度 5.31 mm
封装 TO-247-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
APT30M85BVRG Microsemi 美高森美 | 当前型号 | 当前型号 |
APT30M85BVR 美高森美 | 功能相似 | APT30M85BVRG和APT30M85BVR的区别 |