APT80GA90LD40

高速PT IGBT High Speed PT IGBT

This IGBT transistor from is perfect if your circuit contains high currents passing through it. It has a maximum collector emitter voltage of 900 V. Its maximum power dissipation is 625000 mW. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 150 °C.