APT25GP120BDQ1G

功率半导体功率模块 Power Semiconductors Power Modules

This powerful and secure IGBT transistor from will make sure your circuit works properly. It has a maximum collector emitter voltage of 1200 V. Its maximum power dissipation is 417000 mW. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a single configuration.