APT64GA90B2D30

功率半导体功率模块 Power Semiconductors Power Modules

The IGBT transistor from is the best electronic switch for fast switching. Its maximum power dissipation is 500000 mW. It has a maximum collector emitter voltage of 900 V. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a single configuration.