APT50GP60B2DQ2G概述
Trans IGBT Chip N-CH 600V 150A 625000mW 3Pin3+Tab T-MAX
The IGBT transistor from is perfect to use as an electronic switch eliminating the current at the gate. Its maximum power dissipation is 625000 mW. It has a maximum collector emitter voltage of 600 V. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 150 °C.
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替代型号APT50GP60B2DQ2G
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
APT50GP60B2DQ2G Microsemi 美高森美 | 当前型号 | 当前型号 |
APT50GP60LDLG 美高森美 | 完全替代 | APT50GP60B2DQ2G和APT50GP60LDLG的区别 |
APT50GP60B2DQ2 美高森美 | 功能相似 | APT50GP60B2DQ2G和APT50GP60B2DQ2的区别 |