功率MOS 7® IGBT POWER MOS 7® IGBT
The IGBT transistor from will work effectively even with higher currents. It has a maximum collector emitter voltage of 1200 V. Its maximum power dissipation is 543000 mW. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a single configuration.
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
APT35GP120BG Microsemi 美高森美 | 当前型号 | 当前型号 |
HGTG20N60A4D 安森美 | 功能相似 | APT35GP120BG和HGTG20N60A4D的区别 |
HGTG11N120CND 安森美 | 功能相似 | APT35GP120BG和HGTG11N120CND的区别 |
HGTG12N60A4D 安森美 | 功能相似 | APT35GP120BG和HGTG12N60A4D的区别 |