




TO-264 N-CH 1200V 24A
Thanks to , both your amplification and switching needs can be taken care of with one component: the power MOSFET. Its maximum power dissipation is 1040000 mW. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.
额定电压DC 1.20 kV
额定电流 24.0 A
漏源极电阻 500 mΩ
极性 N-CH
耗散功率 1040 W
阈值电压 4 V
输入电容 8.37 nF
栅电荷 260 nC
漏源极电压Vds 1200 V
漏源击穿电压 1200 V
连续漏极电流Ids 24.0 A
上升时间 27 ns
输入电容Ciss 8370pF @25VVds
下降时间 42 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 1040W Tc
安装方式 Through Hole
引脚数 3
封装 TO-264-3
长度 26.49 mm
宽度 20.5 mm
高度 5.21 mm
封装 TO-264-3
材质 Silicon
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free