APT50GF120LRG

功率半导体功率模块 Power Semiconductors Power Modules

This IGBT transistor from is an electronic switch that can handle large currents with very little gate current drive. It has a maximum collector emitter voltage of 1200 V. Its maximum power dissipation is 781000 mW. This IGBT transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single configuration.