APT80GP60B2G

Trans IGBT Chip N-CH 600V 100A 1041000mW 3Pin3+Tab T-MAX

The IGBT transistor from is perfect to use as an electronic switch eliminating the current at the gate. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 1041000 mW. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a single configuration.