APT100GT60JR

Trans IGBT Chip N-CH 600V 148A 500000mW 4Pin SOT-227

Don"t be afraid to step up the amps in your device when using this IGBT transistor from . Its maximum power dissipation is 500000 mW. It has a maximum collector emitter voltage of 600 V. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a single dual emitter configuration.