APT60GA60JD60

高速PT IGBT High Speed PT IGBT

This IGBT transistor from is perfect if your circuit contains high currents passing through it. Its maximum power dissipation is 356000 mW. It has a maximum collector emitter voltage of 600 V. It is made in a single dual emitter configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.