APT40GP60JDQ2

IGBT 模块 Insulated Gate Bipolar Transistor - PT Power MOS 7 - Combi

Don"t be afraid to step up the amps in your device when using this IGBT transistor from . Its maximum power dissipation is 284000 mW. It has a maximum collector emitter voltage of 600 V. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a single dual emitter configuration.