N沟道MOSFET N-Channel MOSFET
Create an effective common drain amplifier using this power MOSFET from . Its maximum power dissipation is 545000 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
艾睿:
Create an effective common drain amplifier using this APT25M100J power MOSFET from Microsemi. Its maximum power dissipation is 545000 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
Verical:
Trans MOSFET N-CH Si 1KV 25A 4-Pin SOT-227 Tube
额定电压DC 1.00 kV
额定电流 25.0 A
极性 N-CH
耗散功率 545 W
输入电容 9.84 nF
栅电荷 305 nC
漏源极电压Vds 1000 V
连续漏极电流Ids 25.0 A
上升时间 40 ns
输入电容Ciss 9835pF @25VVds
下降时间 38 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 545W Tc
安装方式 Screw
引脚数 4
封装 SOT-227-4
封装 SOT-227-4
材质 Silicon
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free