Trans RF MOSFET N-CH 450V 9A 3Pin3+Tab TO-247
offers the perfect solution for amplifying and switching electronic signals in a radio frequency environment with this RF amplifier. Its maximum power dissipation is 165000 mW. This RF power MOSFET has an operating temperature range of -55 °C to 150 °C. This N channel RF power MOSFET operates in enhancement mode. Its maximum frequency is 120 MHz.
频率 81.36 MHz
耗散功率 165000 mW
漏源击穿电压 450V min
上升时间 3.1 ns
输出功率 90 W
增益 13 dB
输入电容Ciss 980pF @150VVds
下降时间 3 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 165000 mW
额定电压 450 V
安装方式 Through Hole
引脚数 3
封装 TO-247-3
高度 21.46 mm
封装 TO-247-3
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free