APT200GN60JDQ4

功率半导体功率模块 Power Semiconductors Power Modules

This fast-switching IGBT transistor from will be perfect in your circuit. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 682000 mW. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. It is made in a single dual emitter configuration.