Trans RF MOSFET N-CH 450V 9A 3Pin3+Tab TO-247
Amplifying and switching electronic signals in radio frequency environments is easy with this RF amplifier from . Its maximum power dissipation is 165000 mW. Its maximum frequency is 120 MHz. This N channel RF power MOSFET operates in enhancement mode. This RF power MOSFET has a minimum operating temperature of -55 °C and a maximum of 150 °C.
频率 81.36 MHz
额定电流 9 A
耗散功率 165000 mW
漏源极电压Vds 450 V
漏源击穿电压 450V min
上升时间 3.1 ns
输出功率 90 W
增益 13 dB
输入电容Ciss 980pF @150VVds
下降时间 3 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 165000 mW
额定电压 450 V
安装方式 Through Hole
引脚数 3
封装 TO-247-3
高度 21.46 mm
封装 TO-247-3
产品生命周期 Active
包装方式 Rail, Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free