APT80GP60J

Trans IGBT Chip N-CH 600V 151A 462000mW 4Pin SOT-227

This fast-switching IGBT transistor from will be perfect in your circuit. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 462000 mW. This IGBT transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single dual emitter configuration.