APT45GP120J

功率半导体功率模块 Power Semiconductors Power Modules

This IGBT transistor from is perfect if your circuit contains high currents passing through it. Its maximum power dissipation is 329000 mW. It has a maximum collector emitter voltage of 1200 V. It is made in a single dual emitter configuration. This IGBT transistor has an operating temperature range of -55 °C to 150 °C.