RF功率MOSFET N沟道增强模式 RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE
By using a combination of metal-oxide-semiconductor technology, this RF amplifier from can be implemented in an electronic circuit as a switching device. Its maximum power dissipation is 250000 mW. Its maximum frequency is 65 MHz. This N channel RF power MOSFET operates in enhancement mode. This RF power MOSFET has an operating temperature range of -55 °C to 150 °C.
频率 40.68 MHz
耗散功率 250000 mW
漏源击穿电压 500V min
上升时间 6 ns
输出功率 150 W
增益 15 dB
测试电流 50 mA
输入电容Ciss 1200pF @150VVds
下降时间 4 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 250000 mW
额定电压 500 V
安装方式 Through Hole
引脚数 3
封装 TO-247-3
封装 TO-247-3
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
ARF460BG Microsemi 美高森美 | 当前型号 | 当前型号 |