APT100GN120JDQ4

迅雷IGBT Thunderbolt IGBT

This IGBT transistor from is an electronic switch that can handle large currents with very little gate current drive. Its maximum power dissipation is 446000 mW. It has a maximum collector emitter voltage of 1200 V. It is made in a single dual emitter configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.