APT50GF120JRDQ3

Trans IGBT Chip N-CH 1200V 120A 521000mW 4Pin SOT-227

Don"t be afraid to step up the amps in your device when using this IGBT transistor from . Its maximum power dissipation is 521000 mW. It has a maximum collector emitter voltage of 1200 V. It is made in a single dual emitter configuration. This IGBT transistor has an operating temperature range of -55 °C to 150 °C.