APTGF90H60T3G

APTGF90H60T3G图片1
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APTGF90H60T3G概述

全 - 桥NPT IGBT功率模块 Full - Bridge NPT IGBT Power Module

This infineon IGBT module from will handle large currents with little seepage. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 416000 mW. It is made in a quad configuration. This IGBT driver board has a minimum operating temperature of -40 °C and a maximum of 150 °C.

APTGF90H60T3G中文资料参数规格
技术参数

耗散功率 416000 mW

击穿电压集电极-发射极 600 V

输入电容Cies 4.4nF @25V

额定功率Max 416 W

工作温度Max 150 ℃

工作温度Min -40 ℃

耗散功率Max 416000 mW

封装参数

安装方式 Chassis

引脚数 20

封装 SP-3

外形尺寸

封装 SP-3

其他

产品生命周期 Obsolete

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

数据手册

在线购买APTGF90H60T3G
型号: APTGF90H60T3G
描述:全 - 桥NPT IGBT功率模块 Full - Bridge NPT IGBT Power Module

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