APTGF100DA120TG

APTGF100DA120TG图片1
APTGF100DA120TG图片2
APTGF100DA120TG图片3
APTGF100DA120TG图片4
APTGF100DA120TG图片5
APTGF100DA120TG图片6
APTGF100DA120TG概述

升压斩波NPT IGBT功率模块 Boost chopper NPT IGBT Power Module

The infineon IGBT module from will work effectively even with higher currents. It has a maximum collector emitter voltage of 1200 V. Its maximum power dissipation is 568000 mW. This IGBT driver board has an operating temperature range of -40 °C to 150 °C. It is made in a single configuration.

APTGF100DA120TG中文资料参数规格
技术参数

耗散功率 568000 mW

击穿电压集电极-发射极 1200 V

输入电容Cies 6.9nF @25V

额定功率Max 568 W

工作温度Max 150 ℃

工作温度Min -40 ℃

耗散功率Max 568000 mW

封装参数

安装方式 Chassis

引脚数 20

封装 SP-4

外形尺寸

封装 SP-4

其他

产品生命周期 Active

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

海关信息

ECCN代码 EAR99

数据手册

在线购买APTGF100DA120TG
型号: APTGF100DA120TG
描述:升压斩波NPT IGBT功率模块 Boost chopper NPT IGBT Power Module

锐单商城 - 一站式电子元器件采购平台