RF功率MOSFET N沟道PUSH - PULL PAIR RF POWER MOSFET N-CHANNEL PUSH - PULL PAIR
Easily amplify or switch electronic signals and electrical power in a circuit with this semiconductor-based RF amplifier from . Its maximum power dissipation is 910000 mW. This RF power MOSFET has a minimum operating temperature of -55 °C and a maximum of 175 °C. Its maximum frequency is 150 MHz. This N channel RF power MOSFET operates in enhancement mode.