AP2306AGN-HF-3TR

ADVANCED POWER ELECTRONICS CORP  AP2306AGN-HF-3TR  晶体管, MOSFET, N沟道, 5 A, 30 V, 0.035 ohm, 4.5 V, 300 mV

The from Corp is a surface mount, N channel enhancement mode power MOSFET in SOT-23 package. This MOSFET provide designers with best combiation of fast switching, low resistance and cost effectiveness. The device is best suited for medium current applications such as load switches.

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Supports 2.5V gate drive

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Drain to source voltage of 30V

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Gate to source voltage of ±8V

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Continuous drain current Id of 5A at 25°C

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Power dissipation pd of 1.38W

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Operating junction temperature range from -55°C to 150°C

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Low on state resistance of 35mohm at Vgs 4.5V