AP2310GN-HF-3TR

ADVANCED POWER ELECTRONICS CORP  AP2310GN-HF-3TR  晶体管, MOSFET, N沟道, 3 A, 60 V, 0.07 ohm, 10 V, 1.55 V

The from Corp is a surface mount, N channel enhancement mode power MOSFET in SOT-23 package. This MOSFET provide designers with best combination of low resistance, extremely efficient and cost effectiveness. The device is best suited for commercial and industrial applications.

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Simple drive requirement

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Drain to source voltage of 60V

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Gate to source voltage of ±20V

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Continuous drain current Id of 3A at Vgs 10V and 25°C

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Power dissipation pd of 1.38W

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Operating junction temperature range from -55°C to 150°C

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Low on state resistance of 70mohm at Vgs 10V