RF功率MOSFET N沟道增强模式 RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE
The is an RF power transistor designed for very high power scientific, commercial, medical and industrial RF power generator and amplifier applications up to 40 MHz.
• Specified 125 Volt, 27.12 MHz Characteristics:
Output Power = 750 Watts.
Gain = 17dB Class C
Efficiency > 75%
• High Performance Power RF Package.
• Very High Breakdown for Improved Ruggedness.
• Low Thermal Resistance.
• Nitride Passivated Die for Improved Reliability.
• RoHS Compliant
频率 27.12 MHz
额定电流 60 A
耗散功率 1.5 kW
阈值电压 5 V
漏源击穿电压 500 V
上升时间 6 ns
输出功率 750 W
增益 19 dB
输入电容Ciss 5150pF @150VVds
下降时间 10 ns
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 1500000 mW
额定电压 500 V
安装方式 Through Hole
封装 T-1
封装 T-1
工作温度 55℃ ~ 175℃
产品生命周期 Active
包装方式 Box
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99