EEPROM Parallel 1M-bit 128K x 8 5V 44Pin CLLCC
Description
The AT28C010 is a high-performance Electrically Erasable and Programmable Read Only Memory. Its one megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 440 mW. When the device is deselected, the CMOS standby current is less than 300 μA.
Features
• Fast Read Access Time - 120 ns
• Automatic Page Write Operation
– Internal Address and Data Latches for 128-Bytes
– Internal Control Timer
• Fast Write Cycle Time
– Page Write Cycle Time - 10 ms Maximum
– 1 to 128-Byte Page Write Operation
• Low Power Dissipation
– 80 mA Active Current
– 300 µA CMOS Standby Current
• Hardware and Software Data Protection
• DATA Polling for End of Write Detection
• High Reliability CMOS Technology
– Endurance: 104 or 105 Cycles
– Data Retention: 10 Years
• Single 5V ± 10% Supply
• CMOS and TTL Compatible Inputs and Outputs
• JEDEC Approved Byte-Wide Pinout