电可擦除可编程只读存储器 64K HI-ENDURANCE w/RDYBSY - 120NS
Description
The AT28C64 is a low-power, high-performance 8,192 words by 8 bit nonvolatile Electrically Erasable and Programmable Read Only Memory with popular, easy to use features. The device is manufactured with Atmel’s reliable nonvolatile technology.
The AT28C64 is accessed like a Static RAM for the read or write cycles without the need for external components.
During a byte write, the address and data are latched in ternally, freeing the microprocessor address and data bus for other operations. Following the initiation of a write cycle, the device will go to a busy state and automatically clear and write the latched data using an internal control timer.
Features
• Fast Read Access Time - 120 ns
• Fast Byte Write - 200 µs or 1 ms
• Self-Timed Byte Write Cycle
Internal Address and Data Latches
Internal Control Timer
Automatic Clear Before Write
• Direct Microprocessor Control
READY/BUSY Open Drain Output
DATA Polling
• Low Power
30 mA Active Current
100 µA CMOS Standby Current
• High Reliability
Endurance: 104 or 105 Cycles
Data Retention: 10 Years
• 5V ± 10% Supply
• CMOS and TTL Compatible Inputs and Outputs
• JEDEC Approved Byte-Wide Pinout
• Commercial and Industrial Temperature Ranges