ANALOG DEVICES AD648JRZ 运算放大器, 双路, 1 MHz, 2个放大器, 1.8 V/µs, ± 4.5V 至 ± 18V, SOIC, 8 引脚
J-FET 放大器 2 电路 - 8-SOIC
得捷:
IC OPAMP JFET 2 CIRCUIT 8SOIC
立创商城:
AD648JRZ
e络盟:
运算放大器, 双路, 1 MHz, 2个放大器, 1.8 V/µs, ± 4.5V 至 ± 18V, SOIC, 8 引脚
艾睿:
Op Amp Dual Low Power Amplifier ±18V 8-Pin SOIC N Tube
安富利:
The AD648 is a matched pair of low power, precision monolithic operational amplifiers. It offers both low bias current 10 pA max, warmed up and low quiescent current 400 µA max and is fabricated with ion-implanted FET and laser wafer trimming technologies. Input bias current is guaranteed over the AD648’s entire common-mode voltage range. The economical J grade has a maximum guaranteed offset voltage of less than 2 mV and an offset voltage drift of less than 20 µV/°C. This level of dc precision is achieved using Analog’s laser wafer drift trimming process. The combination of low quiescent current and low offset voltage drift minimizes changes in input offset voltage due to self-heating effects. Five grades are offered over the commercial, industrial and military temperature ranges. The AD648 is recommended for any dual supply op amp application requiring low power and excellent dc and ac performance. In applications such as battery-powered, precision instrument front ends and CMOS DAC buffers, the AD648’s excellent combination of low input offset voltage and drift, low bias current, and low 1/f noise reduces output errors. High common-mode rejection 82 dB, min on the “B” grade and high open-loop gain ensures better than 12-bit linearity in high impedance, buffer applications. The AD648 is pinned out in a standard dual op amp configuration and is available in seven performance grades. The AD648J and AD648K are rated over the commercial temperature range of 0°C to 70°C. The AD648 and AD648B are rated over the industrial temperature range of –40°C to +85°C. The AD648S and AD648T are rated over the military temperature range of –55°C to +125°C and the AD648T* grade is available processed to MIL-STD-883B, Rev. C. The AD648 is available in an 8-lead plastic mini-DIP, CERDIP, and SOIC. *Not for new design, obsolete April 2002.
Chip1Stop:
OP Amp Dual GP ±18V 8-Pin SOIC N Tube
TME:
Operational amplifier; 1MHz; 4.5÷18V; Channels:2; SO8
Verical:
Op Amp Dual Low Power Amplifier ±18V 8-Pin SOIC N Tube
Newark:
# ANALOG DEVICES AD648JRZ Operational Amplifier, Dual, 2 Amplifier, 1 MHz, 1.8 V/µs, ± 4.5V to ± 18V, SOIC, 8 Pins
罗切斯特:
AD648 - Operational Amplifier, 2 Func, 3000uV Offset-Max, BIPolar, PDSO8
DeviceMart:
IC OPAMP BIFET 1MHZ DUAL 8SOIC
Win Source:
IC OPAMP JFET 1MHZ 8SOIC
供电电流 340 µA
电路数 2
通道数 2
针脚数 8
耗散功率 0.5 W
共模抑制比 70 dB
输入电容 3.00 pF
带宽 1 MHz
转换速率 1.80 V/μs
增益频宽积 1 MHz
输入阻抗 3.00 TΩ
输入补偿电压 750 µV
输入偏置电流 5 pA
工作温度Max 70 ℃
工作温度Min 0 ℃
增益带宽 1 MHz
耗散功率Max 500 mW
共模抑制比Min 70 dB
电源电压Max 18 V
安装方式 Surface Mount
引脚数 8
封装 SOIC-8
宽度 4 mm
高度 1.5 mm
封装 SOIC-8
工作温度 0℃ ~ 70℃
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Contains Lead
REACH SVHC标准 No SVHC
军工级 Yes
REACH SVHC版本 2015/12/17
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
AD648JRZ ADI 亚德诺 | 当前型号 | 当前型号 |
AD648JRZ-REEL7 亚德诺 | 完全替代 | AD648JRZ和AD648JRZ-REEL7的区别 |
AD648JR 亚德诺 | 完全替代 | AD648JRZ和AD648JR的区别 |
AD648JRZ-REEL 亚德诺 | 完全替代 | AD648JRZ和AD648JRZ-REEL的区别 |