AD648JRZ

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AD648JRZ概述

ANALOG DEVICES  AD648JRZ  运算放大器, 双路, 1 MHz, 2个放大器, 1.8 V/µs, ± 4.5V 至 ± 18V, SOIC, 8 引脚

J-FET 放大器 2 电路 - 8-SOIC


得捷:
IC OPAMP JFET 2 CIRCUIT 8SOIC


立创商城:
AD648JRZ


e络盟:
运算放大器, 双路, 1 MHz, 2个放大器, 1.8 V/µs, ± 4.5V 至 ± 18V, SOIC, 8 引脚


艾睿:
Op Amp Dual Low Power Amplifier ±18V 8-Pin SOIC N Tube


安富利:
The AD648 is a matched pair of low power, precision monolithic operational amplifiers. It offers both low bias current 10 pA max, warmed up and low quiescent current 400 µA max and is fabricated with ion-implanted FET and laser wafer trimming technologies. Input bias current is guaranteed over the AD648’s entire common-mode voltage range. The economical J grade has a maximum guaranteed offset voltage of less than 2 mV and an offset voltage drift of less than 20 µV/°C. This level of dc precision is achieved using Analog’s laser wafer drift trimming process. The combination of low quiescent current and low offset voltage drift minimizes changes in input offset voltage due to self-heating effects. Five grades are offered over the commercial, industrial and military temperature ranges. The AD648 is recommended for any dual supply op amp application requiring low power and excellent dc and ac performance. In applications such as battery-powered, precision instrument front ends and CMOS DAC buffers, the AD648’s excellent combination of low input offset voltage and drift, low bias current, and low 1/f noise reduces output errors. High common-mode rejection 82 dB, min on the “B” grade and high open-loop gain ensures better than 12-bit linearity in high impedance, buffer applications. The AD648 is pinned out in a standard dual op amp configuration and is available in seven performance grades. The AD648J and AD648K are rated over the commercial temperature range of 0°C to 70°C. The AD648 and AD648B are rated over the industrial temperature range of –40°C to +85°C. The AD648S and AD648T are rated over the military temperature range of –55°C to +125°C and the AD648T* grade is available processed to MIL-STD-883B, Rev. C. The AD648 is available in an 8-lead plastic mini-DIP, CERDIP, and SOIC. *Not for new design, obsolete April 2002.


Chip1Stop:
OP Amp Dual GP ±18V 8-Pin SOIC N Tube


TME:
Operational amplifier; 1MHz; 4.5÷18V; Channels:2; SO8


Verical:
Op Amp Dual Low Power Amplifier ±18V 8-Pin SOIC N Tube


Newark:
# ANALOG DEVICES  AD648JRZ  Operational Amplifier, Dual, 2 Amplifier, 1 MHz, 1.8 V/µs, ± 4.5V to ± 18V, SOIC, 8 Pins


罗切斯特:
AD648 - Operational Amplifier, 2 Func, 3000uV Offset-Max, BIPolar, PDSO8


DeviceMart:
IC OPAMP BIFET 1MHZ DUAL 8SOIC


Win Source:
IC OPAMP JFET 1MHZ 8SOIC


AD648JRZ中文资料参数规格
技术参数

供电电流 340 µA

电路数 2

通道数 2

针脚数 8

耗散功率 0.5 W

共模抑制比 70 dB

输入电容 3.00 pF

带宽 1 MHz

转换速率 1.80 V/μs

增益频宽积 1 MHz

输入阻抗 3.00 TΩ

输入补偿电压 750 µV

输入偏置电流 5 pA

工作温度Max 70 ℃

工作温度Min 0 ℃

增益带宽 1 MHz

耗散功率Max 500 mW

共模抑制比Min 70 dB

电源电压Max 18 V

封装参数

安装方式 Surface Mount

引脚数 8

封装 SOIC-8

外形尺寸

宽度 4 mm

高度 1.5 mm

封装 SOIC-8

物理参数

工作温度 0℃ ~ 70℃

其他

产品生命周期 Active

包装方式 Tube

符合标准

RoHS标准 RoHS Compliant

含铅标准 Contains Lead

REACH SVHC标准 No SVHC

军工级 Yes

REACH SVHC版本 2015/12/17

数据手册

AD648JRZ引脚图与封装图
AD648JRZ引脚图
AD648JRZ封装图
AD648JRZ封装焊盘图
在线购买AD648JRZ
型号: AD648JRZ
制造商: ADI 亚德诺
描述:ANALOG DEVICES  AD648JRZ  运算放大器, 双路, 1 MHz, 2个放大器, 1.8 V/µs, ± 4.5V 至 ± 18V, SOIC, 8 引脚
替代型号AD648JRZ
型号/品牌 代替类型 替代型号对比

AD648JRZ

ADI 亚德诺

当前型号

当前型号

AD648JRZ-REEL7

亚德诺

完全替代

AD648JRZ和AD648JRZ-REEL7的区别

AD648JR

亚德诺

完全替代

AD648JRZ和AD648JR的区别

AD648JRZ-REEL

亚德诺

完全替代

AD648JRZ和AD648JRZ-REEL的区别

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