ALLIANCE MEMORY AS7C1026B-15JIN 芯片, 存储器, SRAM, 1MB, 64KX16, 5V, 44SOJ
The is a 5V 64k x 16-bit CMOS Static Random Access Memory SRAM organized as 65536 words x 16-bit. It offers 10/12/15/20ns address access time, 5/6/7/8ns output enable access time high speed. It features easy memory expansion with CE, OE inputs. It is designed for memory applications where fast data access, low power and simple interfacing are desired. When CE is high, the device enters standby mode. If inputs are still toggling, the device will consume ISB power. If the bus is static, then full standby power is reached. For example, the AS7C1026B is guaranteed not to exceed 55mW under nominal full standby conditions. A write cycle is accomplished by asserting write enable and chip enable. Data on the input pins I/O0 through I/O15 is written on the rising edge of WE or CE. To avoid bus contention, external devices should drive I/O pins only after outputs have been disabled with output enable or write enable.
电源电压DC 4.50V min
工作电压 4.5V ~ 5.5V
针脚数 44
存取时间 15 ns
内存容量 1000000 B
工作温度Max 85 ℃
工作温度Min -40 ℃
电源电压 4.5V ~ 5.5V
电源电压Max 5.5 V
电源电压Min 4.5 V
安装方式 Surface Mount
引脚数 44
封装 SOJ-44
封装 SOJ-44
工作温度 -40℃ ~ 85℃ TA
产品生命周期 Active
包装方式 Each
制造应用 计算机和计算机周边, Computers & Computer Peripherals, 工业, Industrial
RoHS标准 RoHS Compliant
含铅标准 无铅
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
AS7C1026B-15JIN Alliance Memory 联盟记忆 | 当前型号 | 当前型号 |
71016S15YGI 艾迪悌 | 类似代替 | AS7C1026B-15JIN和71016S15YGI的区别 |
71016S15YGI8 艾迪悌 | 类似代替 | AS7C1026B-15JIN和71016S15YGI8的区别 |
CY7C1021B-15VI 赛普拉斯 | 类似代替 | AS7C1026B-15JIN和CY7C1021B-15VI的区别 |