APT50GS60BRDQ2G

迅雷高速NPT IGBT与反并联二极管DQ Thunderbolt High Speed NPT IGBT with Anti-Parallel DQ Diode

The IGBT transistor from is the best electronic switch for fast switching. Its maximum power dissipation is 415000 mW. It has a maximum collector emitter voltage of 600 V. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.