AOK30B60D1

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AOK30B60D1概述

Trans IGBT Chip N-CH 600V 60A 208000mW 3Pin3+Tab TO-247 Tube

This IGBT transistor from Alpha & Omega Semiconductor is an electronic switch that can handle large currents with very little gate current drive. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 208000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This IGBT transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single configuration.

AOK30B60D1中文资料参数规格
技术参数

耗散功率 208000 mW

击穿电压集电极-发射极 600 V

反向恢复时间 120 ns

额定功率Max 208 W

工作温度Max 150 ℃

工作温度Min -55 ℃

耗散功率Max 208000 mW

封装参数

安装方式 Through Hole

引脚数 3

封装 TO-247-3

外形尺寸

封装 TO-247-3

物理参数

工作温度 -55℃ ~ 150℃ TJ

其他

产品生命周期 Active

包装方式 Tube

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

海关信息

ECCN代码 EAR99

数据手册

在线购买AOK30B60D1
型号: AOK30B60D1
制造商: Alpha & Omega Semiconductor 万代半导体
描述:Trans IGBT Chip N-CH 600V 60A 208000mW 3Pin3+Tab TO-247 Tube

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