DPAK N-CH 800V 2.8A
General Description
The has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC DC applications.
By providing low RDSon, Ciss and Crss along with guaranteed avalanche capability this part can be adopted quickly into new and existing offline power supply designs.
得捷:
MOSFET N-CH 800V 2.8A TO252
艾睿:
Trans MOSFET N-CH 800V 2.8A 3-Pin2+Tab DPAK
TME:
Transistor: N-MOSFET; unipolar; 800V; 1.8A; 83W; TO252
Verical:
Trans MOSFET N-CH 800V 2.8A 3-Pin2+Tab DPAK
Win Source:
MOSFET N-CH 800V 2.8A TO252
极性 N-CH
耗散功率 83 W
漏源极电压Vds 800 V
连续漏极电流Ids 2.8A
上升时间 25 ns
输入电容Ciss 510pF @25VVds
额定功率Max 83 W
下降时间 19 ns
工作温度Max 150 ℃
工作温度Min -50 ℃
耗散功率Max 83W Tc
安装方式 Surface Mount
引脚数 3
封装 TO-252-3
封装 TO-252-3
工作温度 -50℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free